RBS-channeling studies on damage production by MeV ion implantation in Si(111) wafers-Reference-Cited by-同舟云学术

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RBS-channeling studies on damage production by MeV ion implantation in Si(111) wafers

Published:2001-07 Issue:3 Volume:84 Page:205-210
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Cheang-Wong J.C,Crespo-Sosa A,Oliver A

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. Rutherford backscattering spectrometry and channeling studies on MeV Au-implanted GaAs(100) crystals

2. XPS studies on silicide formation in ion beam irradiated Au/Si system

3. Smoothing of YBa2Cu3O7−δ films by ion cluster beam bombardment

4. RBS-channeling spectra: simulation of as-implanted Si samples through an empirical formula for 〈100〉 axial dechanneling of He in silicon

5. Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison

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1. Ultrahigh stability of oxygen sublattice in β−Ga2O3;Physical Review Materials;2024-08-28

2. Universal radiation tolerant semiconductor;Nature Communications;2023-08-10

3. Surface characterization of Mo-implanted 6H–SiC by high temperature non-reactive wetting tests with the Ni–56Si alloy;Ceramics International;2014-06

4. Structure of End-Grafted Polymer Brushes in Liquid and Supercritical Carbon Dioxide: A Neutron Reflectivity Study;Macromolecules;2003-04-03

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