The impact of defects to minority-carrier dynamics in heavily doped GaAs:C analyzed by transient photoluminescence spectroscopy-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

The impact of defects to minority-carrier dynamics in heavily doped GaAs:C analyzed by transient photoluminescence spectroscopy

Published:2002-04 Issue: Volume:91-92 Page:25-28
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Tomm J.W.,Maaßdorf A.,Mazur Y.I.,Gramlich S.,Richter E.,Brunner F.,Weyers M.,Tränkle G.,Malyarchuk V.,Günther T.,Lienau Ch.,Jurisch M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. Minority carrier lifetime degradation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition

2. Minority electron lifetimes in heavily dopedp‐type GaAs grown by molecular beam epitaxy

3. Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE

4. Minority-Carrier Lifetime in Heavily Doped GaAs:C

5. A.P. Heberle, U. Strauss, W.W. Rühle, K.H. Bachem, T. Lauterbach, N.M. Haegel, Ext. Abstracts 1992, Int. Conf. Sol. State Dev. and Mat. Tsukuba, Japan (1992) 290.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Numerical analysis of optically pumped VECSELs;SPIE Proceedings;2013-01-15

2. Nonequilibrium carrier dynamics in heavily p-doped GaAs;The European Physical Journal Applied Physics;2004-07

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP