Optimum carrier concentration of the substrate for avalanche photocurrent multiplication in an amorphous SiC:H/amorphous Si:H/crystalline Si heterojunction photodiode-Reference-Cited by-同舟云学术

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Optimum carrier concentration of the substrate for avalanche photocurrent multiplication in an amorphous SiC:H/amorphous Si:H/crystalline Si heterojunction photodiode

Published:2002-03 Issue:1-2 Volume:90 Page:120-124
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Ohtake H.,Nishiguchi T.,Hirano Y.,Sato F.,Abe M.,Saito N.,Sawada K.,Ando T.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. VISION—Human and Electronic;Rose,1974

2. An avalance-mode amorphous selenium photoconductive layer for use as a camera tube target;Tanioka;IEEE Electron Device Lett.,1987

3. Ultrahigh-sensitivity New Super-HARP Camera;Kubota;IEEE Trans. Broadcasting,1996

4. Small vessel radiography in situ with monochromatic synchrotron radiation;Mori;Radiology,1996

5. A CMOS imager hybridized to an avalanche multiplied film;Takiguchi;IEEE Trans. Electron Devices,1997

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Avalanche multiplication of photocarriers in nanometer-sized silicon dot layers;Applied Physics Letters;2009-08-10

2. Lucky drift impact ionization in amorphous semiconductors;Journal of Applied Physics;2004-08-15

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