Surface characterization of silicon carbide following shallow implantation of platinum ions-Reference-Cited by-同舟云学术

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Surface characterization of silicon carbide following shallow implantation of platinum ions

Published:2007-08 Issue:19-20 Volume:201 Page:8339-8342
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Muntele C.I.,Ichou R.,Muntele I.C.,Sarkisov S.,Ila D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference6 articles.

1. Ion beam processing of single crystalline silicon carbide

2. High dose MeV oxygen ion implantation into SiC

3. Thermal and electrical properties of Au/B4C, Ni/B4C, and Ta/Si contacts to silicon carbide

4. RUMP, Computer Graphics Service;Doolittle,2002

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