The analysis of carbon bonding environment in HWCVD deposited a-SiC:H films by XPS and Raman spectroscopy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference31 articles.
1. Highly conducting doped poly-Si deposited by hot wire CVD and its applicability as gate material for CMOS devices
2. Revisiting the B-factor variation in a-SiC:H deposited by HWCVD
3. Nitrogen dilution effects on structural and electrical properties of hot-wire-deposited a-SiN:H films for deep-sub-micron CMOS technologies
4. Ultra-thin silicon nitride by hot wire chemical vapor deposition (HWCVD) for deep sub-micron CMOS technologies
5. X‐ray photoelectron spectroscopy of initial stages of nucleation and growth of diamond thin films during plasma assisted chemical vapor deposition
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