Effects of process parameters on the refractive index of F-doped SiOC:H films grown by PECVD-Reference-Cited by-同舟云学术

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Effects of process parameters on the refractive index of F-doped SiOC:H films grown by PECVD

Published:2007-02 Issue:9-11 Volume:201 Page:5363-5366
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Yoon S.G.,Kang S.M.,Park W.J.,Kim H.,Yoon D.H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference11 articles.

1. Thermal stability and bonding configuration of fluorine-modified low-k SiOC:H composite films

2. Physical and chemical aspects in the application of thin films on optical elements

3. Thin Film Optical Filters;Macleod,2001

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of fluorinated silica thin films with ultra-low refractive index deposited at low temperature;Thin Solid Films;2015-02

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