Preparation of nanocrystalline cubic silicon carbide thin films by hot-wire CVD at various filament-to-substrate distances
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference27 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
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5. Parameters determining crystallinity in β-SiC thin films prepared by catalytic chemical vapor deposition
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1. The optical properties of silicon carbide thin films prepared by HWCVD from pure silane and methane under various total gas partial pressure;Materials Research Express;2019-06-19
2. Solid-State Limited Nucleation of NiSi/SiC Core-Shell Nanowires by Hot-Wire Chemical Vapor Deposition;Materials;2019-02-24
3. Growth of Si-based core–shell nanowires through gases decomposition reactions with tunable morphologies, compositions, and electrochemical properties;Journal of Materials Science: Materials in Electronics;2018-01-15
4. Temperature dependences of current density–voltage and capacitance–frequency characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes;Thin Solid Films;2016-11
5. Influence of total gas partial pressure on the structural formation of SiC thin films deposited by HWCVD technique;Journal of Materials Science: Materials in Electronics;2016-07-01
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