Phosphane copper(I) complexes as CVD precursors-Reference-Cited by-同舟云学术

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Phosphane copper(I) complexes as CVD precursors

Published:2007-09 Issue:22-23 Volume:201 Page:9089-9094
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Roth Nina,Jakob Alexander,Waechtler Thomas,Schulz Stefan E.,Gessner Thomas,Lang Heinrich

Funder

Verband der Chemischen Industrie

Deutsche Forschungsgemeinschaft

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference22 articles.

1. Low-Temperature Properties of Silver

2. Observation of specific intermolecular interactions in the X-ray crystal structure of Cu(I) (1,1,1,3,5,5,5-hepta-fluoropentane-2,4-dionato) (vinyltrimethylsilane)

3. The Chemistry of Metal CVD;Kodas,1994

4. Why is coordination chemistry stretching the limits of micro-electronics technology?

5. Chemical vapor deposition of copper from copper(I) trimethylphosphine compounds

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1. Synthesis of β‐Ketoiminato Copper(II) Complexes and Their Use in Copper Deposition;Zeitschrift für anorganische und allgemeine Chemie;2020-01-22

2. Molecular dicopper(I) oxalate stabilized by two N -heterocyclic carbenes: A potential precursor for copper deposition;Journal of Organometallic Chemistry;2016-10

3. Advances in Deposition of Metals from Metal Enolates;PATAI'S Chemistry of Functional Groups;2016-03-31

4. Chemical and electrochemical oxidation studies on new copper(I) ferrocenyl-functionalised β-diketonates;Inorganica Chimica Acta;2014-02

5. Gaseous phase studies of new copper(II) carboxylate complexes with tert-butylamine as potential precursors for chemical vapor deposition (CVD);Polyhedron;2013-02

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