Removal of residual oxide layer formed during chemical–mechanical-planarization process for lowering contact resistance
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference19 articles.
1. A global view of interconnects
2. Advanced copper interconnections for silicon CMOS technologies
3. Logic Circuits with Carbon Nanotube Transistors
4. Hot Nanotubes: Stable Heating of Individual Multiwall Carbon Nanotubes to 2000 K Induced by the Field-Emission Current
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2. Back-end-of-line compatible contact materials for carbon nanotube based interconnects;Microelectronic Engineering;2015-04
3. A hydrodynamic and kinematic analysis of chemical–mechanical planarization mechanism in double sided polisher;International Journal of Machine Tools and Manufacture;2014-07
4. Selective growth of carbon nanotubes on the substrate dependently active iron nano-particles;Materials Research Express;2014-05-14
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