The relaxation of electrophysical properties HgCdTe epitaxial films affected by plasma of high frequency nanosecond volume discharge in atmospheric-pressure air-Reference-Cited by-同舟云学术

The relaxation of electrophysical properties HgCdTe epitaxial films affected by plasma of high frequency nanosecond volume discharge in atmospheric-pressure air

Published:2020-04 Issue: Volume:387 Page:125527
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Korotaev A.G.,Grigoryev D.V.^ORCID,Voitsekhovskii A.V.,Lozovoy K.A.,Tarasenko V.F.,Ripenko V.S.,Shulepov M.A.,Erofeev M.V.,Yakushev M.V.,Dvoretskii S.A.,Mikhailov N.N.,Varavin V.S.

Funder

Tomsk State University

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

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4. Methods of Manufacturing a Detector Device, UK Patent GB 2095898;Wotherspoon,1981

5. Ion etching of HgCdTe: properties, patterns and use as a method for defect studies;Izhnin;Opto-Electronics Review,2017

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