Growth mechanism of indium nitride via sol–gel spin coating method and nitridation process-Reference-Cited by-同舟云学术

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Growth mechanism of indium nitride via sol–gel spin coating method and nitridation process

Published:2017-01 Issue: Volume:310 Page:38-42
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Lee Zhi Yin,Ng Sha Shiong,Yam Fong Kwong

Funder

Ministry of Higher Education of Malaysia

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference35 articles.

1. RF-molecular beam epitaxy growth and properties of InN and related alloys;Nanishi;Jpn. J. Appl. Phys.,2003

2. Growth and characterization of InN thin films on sapphire by MOCVD;Xie;Chin. Phys. Lett.,2007

3. High power InGaN/GaN double-heterostructure violet light emitting diodes;Nakamura;Appl. Phys. Lett.,1993

4. Indium nitride (InN): a review on growth, characterization and properties;Bhuiyan;J. Appl. Phys.,2003

5. Thermal stability of indium nitride at elevated temperatures and nitrogen pressures;McChesney;Mater. Res. Bull.,1970

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2. Plasma-Assisted Molecular Beam Epitaxy of In-Rich InGaN: Growth Optimization for Near-IR Lasing;ECS Journal of Solid State Science and Technology;2022-01-01

3. Fabrication and characterization of InN-based metal-semiconductor-metal infrared photodetectors prepared using sol–gel spin coated technique;Functional Materials Letters;2021-05-27

4. Sol–Gel Spin Coating Growth of Magnesium-Doped Indium Nitride Thin Films on Different Substrates;Engineering Journal;2020-07-31

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