The effects of Cu-doped ZnTe intermediate layer on the Ohmic contact to CdZnTe films-Reference-Cited by-同舟云学术

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The effects of Cu-doped ZnTe intermediate layer on the Ohmic contact to CdZnTe films

Published:2017-06 Issue: Volume:320 Page:366-370
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Qin Kaifeng,Ji Huanhuan,Huang Jian,Tang Ke,Shen Yibin,Zhang Xiaotian,Cao Meng,Zhang Jijun,Shen Yue,Wang Linjun

Funder

National Natural Science Foundation of China

Science and Technology Commission of Shanghai

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference27 articles.

1. Surface leakage current control with heterojunction-type passivation in semi-insulating CdZnTe material

2. An improved PIN photodetector with integrated JFET on high-resistivity silicon

3. Electrochemical growth of CdZnTe thin films

4. The growth and the interfacial layer of CdZnTe nano-crystalline films by vacuum evaporation

5. Cadmium zinc telluride and its use as a nuclear radiation detector material

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1. Zinc Telluride Prepared by RF-Sputtering at 150W: Optical, Structural and Electrical Properties;2024 4th International Conference on Innovative Research in Applied Science, Engineering and Technology (IRASET);2024-05-16

2. Tailoring ohmic contact of CdZnTe based device using a ZnTe:Cu film interlayer;Vacuum;2024-04

3. Performance of ultraviolet photodetectors based on sputtered CdZnTe films;Fifth International Conference on Optoelectronic Science and Materials (ICOSM 2023);2024-02-01

4. Influence of substrate temperature on the properties of ZnTe:Cu films prepared by a magnetron co-sputtering method;Heliyon;2024-01

5. A comprehensive review of flexible cadmium telluride solar cells with back surface field layer;Heliyon;2023-11

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