Fabrication and characterization of p-CuS/n-GaN thin film heterojunction diodes-Reference-Cited by-同舟云学术

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Fabrication and characterization of p-CuS/n-GaN thin film heterojunction diodes

Published:2016-12 Issue: Volume:307 Page:1024-1028
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Li Lunjuan,Huang Jian,Yang Weichuan,Tang Ke,Ren Bing,Xu Haitao,Wang Linjun

Funder

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference24 articles.

1. Combining diamond electrodes with GaN heterostructures for harsh environment ISFETs;Dipalo;Diam. Relat. Mater.,2009

2. Heat-spreading diamond films for GaN-based high-power transistor devices;Seelmann. Eggebert;Diam. Relat. Mater.,2001

3. Parameter window of diamond growth on GaN films by microwave plasma chemical vapor deposition;Mohapatra;Diam. Relat. Mater.,2008

4. Characteristics of ZnO/GaN heterostructure formed on GaN substrate by sputtering deposition of ZnO;Lee;Mater. Sci. Eng. B,2007

5. The band alignment of Cu2O/ZnO and Cu2O/GaN heterostructures;Kramm;Appl. Phys. Lett.,2012

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1. Structural, Optical, and Electrical Properties of Tin-Doped CuS Nanoparticles for Photocatalytic Enhancement and Heterojunction Diode;Journal of Electronic Materials;2023-11-02

2. Physical properties of Pb-doped CuS nanostructures for optoelectronic applications;Materials Science in Semiconductor Processing;2021-03

3. Chemically Sprayed p-type CuS Thin Film-Characterization and Feasibility Study on Junction with n-Si for the Development of Solar Cell;2020 5th IEEE International Conference on Emerging Electronics (ICEE);2020-11-26

4. Structural, Morphological, and Optical Characterization of GaN/p-Si Thin Films for Various Argon Flow Rates;JOM;2019-10-29

5. Role of RF power on physical properties of RF magnetron sputtered GaN/p-Si(1 0 0) thin film;Materials Science-Poland;2019-09-01

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