Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell-Reference-Cited by-同舟云学术

Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell

Published:2016-12 Issue: Volume:307 Page:1096-1099
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Cho Young Joon,Cha Hamchorom,Chang Hyo Sik

Funder

Ministry of Trade, Industry and Energy

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference17 articles.

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3. Role of annealing conditions on surface passivation properties on ALD Al2O3 films;Kersten;Energy Procedia,2013

4. Effective surface passivation of crystalline silicon using ultrathin Al2O3 films and Al2O3/SiNx stacks;Schmidt;Phys. Status Solidi (RRL),2009

5. Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge;Agostinelli;Sol. Energy Mater. Sol. Cells,2006

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