A high-activity nitrogen plasma flow source for deposition of silicon nitride films-Reference-Cited by-同舟云学术

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A high-activity nitrogen plasma flow source for deposition of silicon nitride films

Published:2016-05 Issue: Volume:294 Page:194-200
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Shi D.Q.,Xu W.,Miao C.Y.,Ma C.Y.,Ren C.S.,Lu W.Q.,Zhang Q.Y.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference41 articles.

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3. The interaction of a direct-current cold atmospheric-pressure air plasma with bacteria;Feng;IEEE Trans. Plasma Sci.,2009

4. Room-temperature atmospheric argon plasma jet sustained with submicrosecond high-voltage pulses;Walsh;Appl. Phys. Lett.,2007

5. Dynamics of an atmospheric pressure plasma plume generated by submicrosecond voltage pulses;Lu;J. Appl. Phys.,2006

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