Simulation of SiC deposition from SiH4/C3H8/Ar/H2 mixtures in a cold-wall CVD reactor-Reference-Cited by-同舟云学术

Simulation of SiC deposition from SiH4/C3H8/Ar/H2 mixtures in a cold-wall CVD reactor

Published:2004-01 Issue: Volume:177-178 Page:382-388
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Dollet A.,de Persis S.,Pons M.,Matecki M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference22 articles.

1. G. Chaix, A. Dollet, In: Proceedings of the 199th meeting of the Electrochemical Society, Symposium: fundamental gas phase and surface chemistry of vapor deposition II, The Electrochemical Society, Pennington, NJ, PV2001-13, 2001, p. 33

2. G. Chaix, A. Dollet, M. Matecki, S. de Persis, Y. Wang, F. Teyssandier, In Proceedings of the 15th International Conference on CVD, The Electrochemical Society, Pennington, NJ, PV2000-13, 2000, p. 209

3. Design and Performance of a New Reactor for Vapor Phase Epitaxy of 3C, 6H, and 4H SiC

4. Transport Phenomena;Bird,1960

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