Organosilicon ion beam for SiC heteroepitaxy-Reference-Cited by-同舟云学术

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Organosilicon ion beam for SiC heteroepitaxy

Published:2004-01 Issue: Volume:177-178 Page:260-263
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Kiuchi Masato,Matsutani Takaomi,Takeuchi Takae,Matsumoto Takashi,Sugimoto Satoshi,Goto Seiichi

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference10 articles.

1. Low Energy Ion–Source Interactions;Rabalais,1994

2. A Molecular and Ion-Beam Epitaxy System for the Growth of III-V Compound Semiconductors Using a Mass-Separated, Low-Energy Group-V Ion Beam

3. Mass‐separated negative‐ion‐beam deposition system

4. A dual-source low-energy mass-analysed ion beam system for semiconductor epitaxy and novel materials growth

5. Construction, characterization and applications of a compact mass-resolved low-energy ion beam system

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion beam synthesis of SiC thin films;Journal of Electroceramics;2008-08-29

2. Fragment Ions of Dimethylsilane Produced by Hot Tungsten Wires;Japanese Journal of Applied Physics;2006-10-24

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