Vertical differential displacements at a pad/sapphire interface during polishing
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials,Condensed Matter Physics
Reference9 articles.
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2. Modeling of chemical-mechanical polishing; a review;Nanz;IEE Trans. Semiconductor Manufacturing,1995
3. Feature-scale fluid based erosion modeling for chemical-mechanical polishing;Runnels;J. Electrochem. Soc.,1994
4. L.M. Cook, Planarization by polishing: chemical processes in dielectric and metal CMP, Extended Abstract of 1995 International Conference on Solid State Devices and Materials — The Japan Society of Applied Physics, p. 581.
5. The theory and design of plate glass polishing machines;Preston;J. Soc. Glass Technol.,1927
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A study of chemical products formed on sapphire (0001) during chemical–mechanical polishing;Surface and Coatings Technology;2015-05
2. Measurements of Slurry Film Thickness and Wafer Drag during CMP;Journal of The Electrochemical Society;2004
3. Investigating Slurry Transport Beneath a Wafer during Chemical Mechanical Polishing Processes;Journal of The Electrochemical Society;2000
4. The Effect of Wafer Shape on Slurry Film Thickness and Friction Coefficients in Chemical Mechanical Planarization;MRS Proceedings;2000
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