Author:
Abgaryan Karine K.,Volodina Olga V.,Uvarov Sergey I.
Reference21 articles.
1. Fedina, L. I., Aseev, A. L., Denisenko, S. G., Smirnov, L. S., Electron microscopy data for threshold energy of point defect creation in silicon, in: H.J. Bardeleben (Ed.), Materials Science Forum: Defects in Semiconductors, vol. 10–12, 1986, pp. 1123–1128. http://dx.doi.org/10.4028/www.scientific.net/MSF.10-12.1123.
2. Clusters of Interstitial Atoms in Silicon and Germanium;Aseev,1994
3. The Intrinsic Point Defect Clustering in Si: A Study by HVEM and HREM In Situ Electron Irradiation;Fedina,1997
4. Free-energy calculations of intrinsic point defects in silicon;Al-Mushadani;Phys. Rev. B.,2003
5. A fourfold coordinated point defect in silicon;Goedecker;Phys. Rev. Lett.,2002
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