Charge carrier lifetime measurements on high purity silicon-Reference-Cited by-同舟云学术

Charge carrier lifetime measurements on high purity silicon

Published:1987-01 Issue:3 Volume:253 Page:351-359
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

van Wijnen P.J.,ten Kate W.R.Th.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference12 articles.

1. A linear-sweep MOS-C technique for determining minority carrier lifetimes

2. Fabrication of low noise silicon radiation detectors by the planar process

3. Statistics of the Recombinations of Holes and Electrons

4. Physics of Semiconductor Devices;Sze,1981

5. The concept of generation and recombination lifetimes in semiconductors

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