Heteroepitaxial CdTe layers on Si-substrates for radiation sensor arrays with integrated Si-electronics-Reference-Cited by-同舟云学术

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Heteroepitaxial CdTe layers on Si-substrates for radiation sensor arrays with integrated Si-electronics

Published:1992-11 Issue:3 Volume:322 Page:352-356
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Tiwari A.N.,Zogg H.,Blunier S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference16 articles.

1. New detector concepts

2. Molecular beam epitaxial growth of high structural perfection CdTe on Si using a (Ca,Ba)F2buffer layer

3. Infrared sensor arrays with 3-12 mu m cutoff wavelengths in heteroepitaxial narrow-gap semiconductors on silicon substrates

4. Fabrication procedures of photovoltaic lead-chalcogenide-on-silicon infrared sensor arrays for thermal imaging

5. Molecular beam epitaxial growth of (100) oriented CdTe on Si (100) using BaF2‐CaF2as a buffer

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. IntegratedIn Situ wafer and system monitoring for the growth of CdTe/ZnTe/GaAs/Si for mercury cadmium telluride epitaxy;Journal of Electronic Materials;1995-05

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