Author:
Karpinski W.,Kubicki T.,Lübelsmeyer K.,Toporowsky M.,Wallraff W.,Heime K.,Wüller R.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
12 articles.
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1. Electrical properties of Sn/p-Si (MS) Schottky barrier diodes to be exposed to 60Co γ-ray source;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2006-10
2. Radiation tolerance of epitaxial silicon carbide detectors for electrons and γ-rays;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2003-11
3. Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma-rays;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2003-06
4. The effect of incremental gamma-ray doses and incremental neutron fluences upon the performance of self-biased 10B-coated high-purity epitaxial GaAs thermal neutron detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2002-08
5. Semi-insulating GaAs-based Schottky contacts in the role of detectors of ionising radiation: An effect of the interface treatment;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1999-09