Fast neutron irradiation for fabrication of narrow forward voltage p-i-n diodes-Reference-Cited by-同舟云学术

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Fast neutron irradiation for fabrication of narrow forward voltage p-i-n diodes

Published:1993-06 Issue:3 Volume:329 Page:467-469
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Bhatnagar P.K.,Pandya Arun,Reddy A.R.,Thakur D.K.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference8 articles.

1. The Semiconductor Fast-Neutron Dosimeter-Its Characteristics and Applications

2. IEEE Conf. record Part I, IAS annual meeting;Thakur,1990

3. Fisher Controls Dosimetry system, Fisher Controls limited, Lewisham, London.

4. Electrons and Holes in Semiconductors;Shockley,1950

5. The Effects of Radiation on Electronic Systems;Messenger,1986

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mixed field radiation measurement using MOSFET sensor;Nuclear and Particle Physics Proceedings;2023-11

2. Evaluation of gamma and neutron irradiation effects on the properties of mica film capacitors;Bulletin of Materials Science;2005-12

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