Design of very transparent fluoropolymer resists for semiconductor manufacture at 157 nm-Reference-Cited by-同舟云学术

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Design of very transparent fluoropolymer resists for semiconductor manufacture at 157 nm

Published:2003-07 Issue:1 Volume:122 Page:11-16
ISSN:0022-1139
Container-title:Journal of Fluorine Chemistry
language:en
Short-container-title:Journal of Fluorine Chemistry

Author:

Feiring A.E.,Crawford M.K.,Farnham W.B.,Feldman J.,French R.H.,Leffew K.W.,Petrov V.A.,Schadt F.L.,Wheland R.C.,Zumsteg F.C.

Publisher

Elsevier BV

Subject

Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Environmental Chemistry,Biochemistry

Reference21 articles.

1. Lithographic Imaging Techniques for the Formation of Nanoscopic Features

2. H. Ito, C.G. Willson, J.M.J. Frechet, US Patent 4,491,628 (1985).

3. Dry Etch Resistance of Organic Materials

4. Organic Materials Challenges for 193 nm Imaging

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