Fabrication of NbN/AlN/NbN junctions with Al embedding circuits on Si membrane for 1.5 THz SIS mixers-Reference-Cited by-同舟云学术

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Fabrication of NbN/AlN/NbN junctions with Al embedding circuits on Si membrane for 1.5 THz SIS mixers

Published:1999-10 Issue:10-12 Volume:6 Page:541-545
ISSN:0964-1807
Container-title:Applied Superconductivity
language:en
Short-container-title:Applied Superconductivity

Author:

Villégier J.-C,Delaet B,Larrey V,Salez M,Delorme Y,Munier J.-M

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Engineering

Reference15 articles.

1. Quasi-optical slot antenna SIS mixers

2. A SIS waveguide heterodyne receiver for 600–635 GHz;Salez;Int. J. Infrared Mm Waves,1994

3. Theoretical considerations for THz SIS mixers

4. Performance limitations of niobium-based submillimeter-wave quasi-particle mixers operating near the gap frequency;Febvre;Appl. Phys. Lett.,1995

5. Superconductive tunneling into NbN deposited near room temperature

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1. Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers;AIP Advances;2016-06

2. Tunable microwave impedance matching to a high impedance source using a Josephson metamaterial;Applied Physics Letters;2013-11-18

3. Simulations for membrane-based HEB mixers in array configuration for SHAHIRA;Millimeter and Submillimeter Detectors for Astronomy II;2004-10-08

4. Membrane-based HEB mixer for THz applications;SPIE Proceedings;2003-04-25

5. NbN multilayer technology on R-plane sapphire;IEEE Transactions on Appiled Superconductivity;2001-03

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