On the energy expended per electron-hole-pair produced in p-n-junction-detectors-Reference-Cited by-同舟云学术

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On the energy expended per electron-hole-pair produced in p-n-junction-detectors

Published:1961-01 Issue: Volume:10 Page:237-239
ISSN:0029-554X
Container-title:Nuclear Instruments and Methods
language:en
Short-container-title:Nuclear Instruments and Methods

Author:

Baldinger E.,Czaja W.

Publisher

Elsevier BV

Subject

General Medicine

Reference14 articles.

1. Impulsverstärker und Impulsspektrographen

2. Electron Multiplication in Silicon and Germanium

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron-hole pair creation and conversion efficiency in radioisotope microbatteries;Applied Radiation and Isotopes;2022-02

2. Temperature Response of Silicon Surface Barrier Semiconductor Detectors Operated in the DC–Short Circuit Configuration;Acta Radiologica: Therapy, Physics, Biology;1973-01

3. Prof. Dr. Ernst Baldinger (1911–1970);Zeitschrift für angewandte Mathematik und Physik ZAMP;1971-01

4. Bandgap Dependence and Related Features of Radiation Ionization Energies in Semiconductors;Journal of Applied Physics;1968-03

5. Ionization fluctuations and resolution of ionization chambers and semiconductor detectors;Nuclear Instruments and Methods;1967-02

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