Raman scattering from phonons and electronic evcitations in US3, USe3 and UTe3-Reference-Cited by-同舟云学术

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Raman scattering from phonons and electronic evcitations in US3, USe3 and UTe3

Published:1986-07 Issue: Volume:121 Page:253-259
ISSN:0022-5088
Container-title:Journal of the Less Common Metals
language:en
Short-container-title:Journal of the Less Common Metals

Author:

Nouvel G.,vwick A.,Renucci M.A.,Noël H.

Publisher

Elsevier BV

Subject

General Engineering

Reference9 articles.

1. Proc. IV Int. Conf. on Crystal Electric Field and Other Structural Effects in f-electrons Systems;Janus,1982

2. Uranium chalcogenides—II Heat capacities and thermodynamic properties of US2 and US3 from 5 to 350°K

3. Electron paramagnetic resonance of impurities in uranium trichalcogenides

4. On the Crystal Structures of TiS3, ZrS3, ZrSe3, ZrTe3, HfS3, and HfSe3.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Magnetism of actinide compounds;Advances in Physics;1999-09

2. Charge Density Wave Caused by Reducing ThSe3 by One Electron. Superstructure and Short-Range Order in ATh2Se6 (A = K, Rb) Studied by X-ray Diffraction, Electron Diffraction, and Diffuse Scattering;Journal of the American Chemical Society;1998-10-01

3. Survey;Landolt-Börnstein - Group III Condensed Matter

4. Figures 423-455;Landolt-Börnstein - Group III Condensed Matter

5. Figures 380-422;Landolt-Börnstein - Group III Condensed Matter

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