The ternary system Co-Ga-As at 800 °C
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference34 articles.
1. Solid state phase equilibria in the PtGaAs system
2. The interaction between thin films of cobalt and GaAs (001) substrates
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4. Compound formation at the interface between cobalt thin films and single‐crystal GaAs
5. Co/GaAs interfacial reactions
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1. Back Matter;Ternary Alloys Based on III-V Semiconductors;2017-07-26
2. Structure and interface composition of Co layers grown on As-rich GaAs(001) c(4×4) surfaces;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
3. Contact materials for III–V semiconductors: phase equilibria of InSb in the ternary system In–Ni–Sb;Materials Science and Engineering: B;1998-08
4. Phase equilibria in the In-Co-As system at 475 °C;Materials Chemistry and Physics;1996-06
5. On the constitution of some Ga-M-P systems (where M represents Co, Rh, Ir, Ni or Pt);Materials Science and Engineering: B;1996-05
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