Sublattice reversal epitaxy: a novel technique for fabricating domain-inverted compound semiconductor structures-Reference-Cited by-同舟云学术

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Sublattice reversal epitaxy: a novel technique for fabricating domain-inverted compound semiconductor structures

Published:2000-01 Issue:3 Volume:1 Page:173-179
ISSN:1468-6996
Container-title:Science and Technology of Advanced Materials
language:en
Short-container-title:Science and Technology of Advanced Materials

Author:

Kondo T.¹,Koh S.²,Ito R.³

Affiliation:

1. Department of Materials Science, Faculty of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan

2. Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8904, Japan

3. cDepartment of Physics, Meiji University, 1-1-1 Higashi-Mita, Tama-ku Kawasaki, 214-8571, Japan

Publisher

Informa UK Limited

Subject

General Materials Science

Link

https://www.tandfonline.com/doi/pdf/10.1016/S1468-6996%2800%2900020-6

Reference21 articles.

1. Interactions between Light Waves in a Nonlinear Dielectric

2. Absolute scale of second-order nonlinear-optical coefficients

3. A quasi‐phase‐matching technique for efficient optical mixing and frequency doubling

4. Infrared second‐harmonic generation in nonbirefringent cadmium telluride

5. Second‐harmonic generation in GaAs ’’stack of plates’’ using high‐power CO2laser radiation

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1. Alloy Design for Additive Manufacturing: Early-Stage Oxidation of Nickel-Based Superalloys;Metallurgical and Materials Transactions A;2022-11-08

2. Sublattice reversal in GaAs/Ge/GaAs (113)B heterostructures and its application to THz emitting devices based on a coupled multilayer cavity;Japanese Journal of Applied Physics;2018-03-13

3. Sublattice reversal in GaAs/Ge/GaAs heterostructures grown on (113)B GaAs substrates;Applied Physics Express;2017-11-30

4. Development of orientation-patterned GaP grown on foreign substrates for QPM frequency conversion devices;SPIE Proceedings;2017-02-20

5. Thick orientation-patterned growth of GaP on wafer-fused GaAs templates by hydride vapor phase epitaxy for frequency conversion;Optical Materials;2016-10

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