Acquisition of the dopant contrast in semiconductors with slow electrons-Reference-Cited by-同舟云学术

Acquisition of the dopant contrast in semiconductors with slow electrons

Published:2020-05 Issue: Volume:241 Page:146836
ISSN:0368-2048
Container-title:Journal of Electron Spectroscopy and Related Phenomena
language:en
Short-container-title:Journal of Electron Spectroscopy and Related Phenomena

Author:

Frank L.,Hovorka M.,El-Gomati M.M.,Müllerová I.,Mika F.,Mikmeková E.

Funder

MEYS CR

European Commission for the Marie Curie Initial Training Network SIMDALEE2

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,Spectroscopy,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Radiation,Electronic, Optical and Magnetic Materials

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4. Recent developments in secondary electron imaging;Howie;J. Microsc.,1995

5. Quantitative two-dimensional dopant profiles obtained directly from secondary electron images;Venables;J. Vac. Sci. Technol. B,1996

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