Morphology change and its chemical states at the Si(100) surface after dipping in hot ultrapure water-Reference-Cited by-同舟云学术

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Morphology change and its chemical states at the Si(100) surface after dipping in hot ultrapure water

Published:2009-02 Issue:2-3 Volume:169 Page:92-96
ISSN:0368-2048
Container-title:Journal of Electron Spectroscopy and Related Phenomena
language:en
Short-container-title:Journal of Electron Spectroscopy and Related Phenomena

Author:

Sano Yuichi,Nakatsuka Kazuhisa,Morikage Yuki,Kamiura Yoshitomo,Mizokawa Yusuke

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,Spectroscopy,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Radiation,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Correlation of stress-induced leakage current in thin oxides with trap generation inside the oxides

2. Detection and Characterization of Stress-Induced Defects in Gate SiO2Films by Conductive Atomic Force Microscopy

3. Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures

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