Photoionization cross-sections and asymmetry parameters for GeH4 in the VUV region-Reference-Cited by-同舟云学术

Photoionization cross-sections and asymmetry parameters for GeH4 in the VUV region

Published:2004-04 Issue:2-3 Volume:135 Page:149-153
ISSN:0368-2048
Container-title:Journal of Electron Spectroscopy and Related Phenomena
language:en
Short-container-title:Journal of Electron Spectroscopy and Related Phenomena

Author:

dos Santos A.S,Machado L.E,Brescansin L.M,Nascimento E.M,Lee M.-T

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,Spectroscopy,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Radiation,Electronic, Optical and Magnetic Materials

Reference30 articles.

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3. F.A. Houle, T.F. Deutsch, R.M. Osgood Jr. (Eds.), Extended Abstracts: Laser Chemical Processing of Semiconductor Devices, Material Research Society, Pittsburg, 1984.

4. Enhancement of open circuit voltage in high efficiency amorphous silicon alloy solar cells

5. Complete microcrystallinep‐i‐nsolar cell—Crystalline or amorphous cell behavior?

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1. Cross sections and asymmetry parameters for photoionization of in the VUV region;Chemical Physics;2009-03

2. Photoionization of C2F4 in the VUV region;International Journal of Quantum Chemistry;2006