Ripples and grain formation in GaAs surfaces exposed to ultrashort laser pulses-Reference-Cited by-同舟云学术

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Ripples and grain formation in GaAs surfaces exposed to ultrashort laser pulses

Published:2002-10 Issue:7 Volume:34 Page:533-540
ISSN:0030-3992
Container-title:Optics & Laser Technology
language:en
Short-container-title:Optics & Laser Technology

Author:

Singh Amit Pratap,Kapoor Avinashi,Tripathi K.N

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Ultrafast electronic disordering during femtosecond laser melting of GaAs;Saeta;Phys Rev Lett,1991

2. The physical mechanisms of short pulse laser ablation;von der Linde;Appl Surf Sci,2000

3. Singh AP, Kapoor A, Tripathi KN, Kumar GR. Pit formation in GaAs surface induced by picosecond and femtosecond laser pulses. SPIE Proc, accepted for publication.

4. Nonthermal pulsed laser annealing of Si;Van Vechten;Phys Lett A,1979

5. Raman measurement of lattice temperature during pulsed laser heating of silicon;Lo;Phys Rev Lett,1980

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