Narrow band gap, high photosensitivity a-SiGe:H films prepared by hot wire chemical vapor deposition (HW-CVD) method
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference18 articles.
1. Proc. 23rd IEEE Photovoltaic Specialists Conf.;Sawada,1993
2. High-photosensitivity a-SiGe: H films prepared by RF glow discharge plasma CVD method
3. Reversible conductivity changes in discharge‐produced amorphous Si
4. Development of High Quality 1.36 eV Amorphous SiGe:H Alloy by RF Glow Discharge under Helium Dilution
5. Catalytic Chemical Vapor Deposition (CTC-CVD) Method Producing High Quality Hydrogenated Amorphous Silicon
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