Short-range order and atomic arrangement in the semiconducting glassy Sb0.05As0.45Se0.50 by X-ray diffraction-Reference-Cited by-同舟云学术

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Short-range order and atomic arrangement in the semiconducting glassy Sb0.05As0.45Se0.50 by X-ray diffraction

Published:1998-08 Issue:5-6 Volume:36 Page:271-278
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Corredor C.,Vázquez J.,Ligero R.A.,Villares P.,Jiménez-Garay R.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference25 articles.

1. N.F. Mott, E.A. Davis, Electronic Processes in Noncrystalline Materials, Clarendon Press, Oxford, 1979.

2. Ab-initio molecular-dynamics of liquid and amorphous semiconductors

3. Analytical determination of the area below the first peak in the RDF for amorphous alloys

4. A theoretical method for determining basic parameters for the short-range order of amorphous ternary alloys, using X-ray diffraction

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Short-range order analysis and electrical properties of As30Se70−xSnx glassy system;Journal of Alloys and Compounds;2008-07

2. Structural interpretation of the infrared spectrum of a Sb0.05As0.45Se0.50 glassy semiconductor;Materials Letters;2000-02

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