Formation of 6H–SiC due to subsequent annealing of sputtering a-SiC:H films
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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1. Effect of grain size on conduction mechanism in polycrystalline silicon
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Nanocrystalline SiC sputtered on porous silicon substrate after annealing;Materials Letters;2013-04
2. Hydrogen activated axial inter-conversion in SiC nanowires;Journal of Solid State Chemistry;2009-03
3. On the formation process of silicon carbide nanophases via hydrogenated thermally induced templated synthesis;Applied Physics A;2004-11-18
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