Plasma etching of dielectric films using the non-global-warming gas CF3I-Reference-Cited by-同舟云学术

Plasma etching of dielectric films using the non-global-warming gas CF3I

Published:1998-03 Issue:3-6 Volume:34 Page:415-419
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Misra A.,Sees J.,Hall L.,Levy R.A.,Zaitsev V.B.,Aryusook K.,Ravindranath C.,Sigal V.,Kesari S.,Rufin D.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference11 articles.

1. Intergovernmental Panel on Climate Change, Radiative Forcing of Climate Change: The 1995 Report of the Scientific Assessment Working Group of the IPCC, 1995.

2. Atmospheric Lifetimes of Long-Lived Halogenated Species

3. S.M. Karecki, B.A. Tao, R. Reif, Proc. of SRC Techcon 1996 Conference, Phoenix, AZ, Sept. 1996.

4. P. Mahal, C3F8 Etch Process Development Report, Novellus Systems, July 1995, unpublished report.

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Kinetic simulation of a 50 mTorr capacitively coupled argon discharge over a range of frequencies and comparison to experiments;Physics of Plasmas;2023-08-01

2. Atomic layer etching of SiO2 using trifluoroiodomethane;Applied Surface Science;2022-07

3. Plasma Etching of SiO2 with CF3I Gas in Plasma-Enhanced Chemical Vapor Deposition Chamber for In-Situ Cleaning;Science of Advanced Materials;2019-12-01

4. Photoelectron spectroscopic study of I−·ICF3: a frontside attack SN2 pre-reaction complex;Physical Chemistry Chemical Physics;2019

5. Applications of Gas-Phase Cleaning for Removal of Surface Contaminants;Developments in Surface Contamination and Cleaning: Applications of Cleaning Techniques;2019