A comparison of dominant recombination mechanisms in n-type InAsSb materials
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. High-Performance InAs1-xSbx Detector Based on AlAs1-ySby/AlSb Quantum Tunneling Barrier;IEEE Transactions on Electron Devices;2023-01
2. Analytical Modelling of Room-Temperature GaAs/InAs0.3Sb0.7 Detector for H2S Gas Detection;Lecture Notes in Electrical Engineering;2018-07-31
3. The complete absorption spectra of InAs0.87Sb0.13 films grown by liquid phase epitaxy;Applied Surface Science;2015-08
4. Two methods for characterizing the electrical properties of InAsSb film grown by liquid phase epitaxy;SPIE Proceedings;2015-04-13
5. Recombination channels in 2.4–3.2 µm GaInAsSb quantum-well lasers;Semiconductor Science and Technology;2012-12-04
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