Development of high temperature operation silicon based MOSFET for harsh environment application
Author:
Funder
Ministry of Education, Science and Technology
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference21 articles.
1. Simulation of conventional bipolar logic technologies in 4H-SiC for harsh environment applications
2. A 200 °C Universal Gate Driver Integrated Circuit for Extreme Environment Applications
3. Complex High-Temperature CMOS Silicon Carbide Digital Circuit Designs
4. An overview of high-temperature electronic device technologies and potential applications
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