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Growth and characterization of InGaAs/InAlAs quantum cascade lasers

  • Published:2001-10 Issue:10 Volume:45 Page:1831-1835
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Liu Feng-Qi,Zhang Quan-Sheng,Zhang Yong-Zhao,Ding Ding,Xu Bo,Wang Zhan-Guo

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MBE growth and optimization of the InGaAs/InAlAs materials system for quantum cascade laser;Frontiers in Materials;2022-10-31

2. MBE growth of strain-compensated InGaAs/InAlAs/InP quantum cascade lasers;Journal of Crystal Growth;2017-05

3. A trace methane gas sensor using mid-infrared quantum cascaded laser at 7.5 μm;Applied Physics B;2013-05-24

4. Characterization of the three-well active region of a quantum cascade laser using contactless electroreflectance;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-05

5. Design and characteristics of quantum cascade laser-based CO detection system;Sensors and Actuators B: Chemical;2009-10
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