Author:
Buot F.A,Mittereder J.A,Anderson W.T,Ioannou D.E
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Electrothermal modeling of IGBTs: application to short-circuit conditions;Ammous;IEEE Trans Power Electron,2000
2. Yamashita Y, Uenishi A, Tomomatsu Y, Haraguchi H, Takahashi H, Takata I, Hagino H. A study on short circuit destruction of IGBTs. Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs. 1993. p. 35–40
3. Baliga BJ. Power semiconductor devices. Boston: PWS Publishing; 1996. p. 416
4. Baliga BJ, Chang HR, Chow TP, Al-Marayati S. New cell designs for improved IGBT safe-operating area. IEDM-88 1988. p. 809–12
5. Mittereder JA, Roussos JA, Anderson WT, Ioannou DE. A novel method for quantitatively measuring the channel temperature of GaAs devices for reliability lifetime prediction. IEEE Trans Reliab [December 2001 issue]
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