Determination of parameters of radiation induced traps in silicon-Reference-Cited by-同舟云学术

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Determination of parameters of radiation induced traps in silicon

Published:2002-06 Issue:6 Volume:46 Page:891-901
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Siemieniec R.,Südkamp W.,Lutz J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Accurate simulation of combined electron and ion irradiated silicon devices for local lifetime tailoring;Vobecký,1994

2. Simulation and experimental results of irradiated power diodes;Siemieniec,1999

3. Statistics of the recombinations of holes and electrons;Shockley;Phys Rev,1952

4. Electron–hole recombination in germanium;Hall;Phys Rev,1952

5. Mourick P. Das Abschaltverhalten von Leistungsdioden. Dissertation, TU Berlin; 1988

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