Effects of post-deposition treatments on ultrathin nitride/oxide gate stack prepared by RTCVD for ULSI devices-Reference-Cited by-同舟云学术

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Effects of post-deposition treatments on ultrathin nitride/oxide gate stack prepared by RTCVD for ULSI devices

Published:2001-03 Issue:3 Volume:45 Page:461-465
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Chen C.H.,Fang Y.K.,Yang C.W.,Ting S.F.,Tsair Y.S.,Wang M.F.,Chen S.C.,Yu C.H.,Liang M.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

2. The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO/sub 2/ interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing

3. Gate quality ultrathin (2.5 nm) PECVD deposited oxynitride and nitrided oxide dielectrics

4. Tsen H-H, Tobin JP. IEEE IEDM Tech Dig 1993:321

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of NH3 annealing on interface and electrical properties of Gd-doped HfO2/Si stack;Journal of Rare Earths;2013-04

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