Author:
Chen X.Y,Johansen J.A,Salm C,van Rheenen A.D
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Chen XY, Salm C, Hooge FN, Woerlee P. 1/f noise in polycrystalline silicon–germanium. Solid-state Electronics 1999;43:1715–24 (Correction: in this paper the Hooge parameter α was calculated using surface concentration by mistake)
2. Drift hole mobility in strained and unstrained doped Si1−x Gex alloys;Manku;IEEE Trans Electron Dev,1993
3. King TJ, Pfiester JR, Shott JD, McVittie JP, Saraswat KC. A polycrystalline Si1−x Gex-gate CMOS technology. Proc of IEDM'90 IEEE, New York: 1990. p. 253–6
4. Experimental studies on 1/f noise;Hooge;Rep Prog Phys,1981
5. 1/f noise in polycrystalline silicon resistors;de Graaff;J Appl Phys,1982
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献