Fully depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems

Author:

Flandre D,Adriaensen S,Akheyar A,Crahay A,Demeûs L,Delatte P,Dessard V,Iniguez B,Nève A,Katschmarskyj B,Loumaye P,Laconte J,Martinez I,Picun G,Rauly E,Renaux C,Spôte D,Zitout M,Dehan M,Parvais B,Simon P,Vanhoenacker D,Raskin J.-P

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference42 articles.

1. A 0.2 μm 1.8 V SOI 550 MHz 64-b power PC microprocessor with copper interconnects;Aipperspach;IEEE J Solid-State Circuits,1999

2. Fully-depleted SOI CMOS technology for low-voltage low-power mixed digital/analog/microwave circuits;Flandre;Analog Integrated Circuits and Signal Processing,1999

3. Flandre D. Silicon-on-insulator technology for high temperature metal oxide semiconductor devices and circuits. In:Kirschman R, editor. High-temperature electronics. New York: IEEE Press; 1998. p. 303–8

4. Silicon on insulator material technology;Bruel;IEEE Lett,1995

5. Improved LOCOS isolation for thin-film SOI MOSFETs;Colinge;Electron Lett,1996

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