Author:
Breed A,Roenker K.P,Todorova D
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. The effects of base dopant outdiffusion and undoped SiGe spacer layers in Si/SiGe/Si heterojunction bipolar transistors;Prinz;IEEE Electron Device Lett.,1991
2. Parasitic energy barriers in SiGe HBTs;Slotboom;IEEE Electron Device Lett.,1991
3. On the optimization of SiGe-base bipolar transistors;Heuting;IEEE Trans. Electron Devices,1996
4. Breed A, Todorova D, Roenker KP. Analysis of parasitic barrier formed at SiGe/Si heterojunctions due to p–n junction displacement. Solid-State Electron, to be published
5. High speed SiGe heterobipolar transistors;Schuppen;J. Cryst. Growth,1995
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