Author:
Bloom Ilan,Pavan Paolo,Eitan Boaz
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference3 articles.
1. Eitan B. U.S. Patent No. 5,768,192. Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping, 16 June, 1998
2. Eitan B, Pavan P, Bloom I, Aloni E, Frommer A, Finzi D. Can NROMTM, a 2-bit trapping storage cell, give a real challenge to floating gate cells? Proc. SSDM 99, Tokyo, Japan, September 1999. p. 522–24
3. NROM: a novel localized trapping, 2-bit nonvolatile memory cell;Eitan;IEEE Electron Dev Lett,2000
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