Author:
Badcock S.G,O’Neill A.G,Chester E.G
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. King TJ, Pfiester JR, Shott JD, McVittie JP, Saraswat KC. A polycrystalline-Si1−xGex-gate CMOS technology. IEDM Tech Dig 1990. p. 2553–6
2. Low parasitic resistance contacts for scaled ULSI devices;Osburn;Thin Solid Films,1998
3. Deep submicron CMOS based on silicon germanium technology;O’Neill;IEEE Trans Electron Dev,1996
4. Rim K, Koester S, Hargrove M, Chu J, Mooney PM, Ott J, Kanarsky T, Ronsheim P, Ieong M, Grill A, Wong HSP. Strained Si NMOSFETs for high performance CMOS technology. Symp VLSI Tech Dig 2001. p. 59–60
5. Material requirements and design considerations for Si/SiGe heterojunction CMOS;Badcock;Superlatt Microstruct,2000
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