Reliability implications in advanced embedded two-transistor-Fowler–Nordheim-NOR flash memory devices-Reference-Cited by-同舟云学术

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Reliability implications in advanced embedded two-transistor-Fowler–Nordheim-NOR flash memory devices

Published:2002-11 Issue:11 Volume:46 Page:1765-1773
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Scarpa A.,Tao G.,Dijkstra J.,Kuper F.G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Binary and multilevel flash cells;Eitan,1999

2. Reliability aspects of advanced embedded floating-gate non-volatile memories with uniform channel FN tunneling for both program and erase;Tao,2001

3. Flash memory reliability;Cappelletti,1999

4. Memory architecture and related issues;Branchetti,1999

5. Reliability of thin dielectric for non-volatile applications;Modelli;Microelectron. Eng.,1999

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reliable techniques for integrated circuit identification and true random number generation using 1.5-transistor flash memory;Integration;2019-03

2. Characterization of the Over-Erase Algorithm in FN/FN Embedded nor Flash Arrays;IEEE Transactions on Device and Materials Reliability;2015-12

3. Technologies and reliability of modern embedded flash cells;Microelectronics Reliability;2006-12

4. Deterioration of stressed oxides: Application to the prediction of a non-volatile memory cell endurance;Journal of Non-Crystalline Solids;2005-07

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