Formula for the current gain cut-off frequency considering intrinsic emitter dimensions and extrinsic parasitics in HBT-Reference-Cited by-同舟云学术

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Formula for the current gain cut-off frequency considering intrinsic emitter dimensions and extrinsic parasitics in HBT

Published:2003-04 Issue:4 Volume:47 Page:747-749
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Shin Hyunchol,Leier Helmut

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Design study of AlGaAs/GaAs HBT;Gao;IEEE Trans. Electron Dev.,1990

2. Emitter length design for microwave power heterojunction bipolar transistors;Liu;Solid State Electron.,1993

3. Handbook of III–V heterojunction bipolar transistors;Liu,1998

4. Sedra AS, Smith KC. Microelectronic circuits, 4th ed. Oxford; 1997

5. Emitter size effects on DC current gain and RF performance in InP/InGaAs HBT’s;Shin;J. Kor. Phys. Soc.,1999

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